(Hong Kong)
Product Summary
The 2N5302 is a Silicon NPN Power Transistor with TO-3 package.
Parametrics
Absolute maximum ratings: (1)Collector-base voltage:60V; (2)Collector-emitter voltage:60V; (3)Emitter-base voltage:5V ; (4)Collector current:30A; (5)Base current:7.5A; (6)Total power dissipation:200W; (7)Junction temperature:200℃; (8)Storage temperature:-65℃ to 200℃.
Features
Features: (1)With TO-3 package ; (2)Complement to type 2N4398/4399/5745; (3)Low collector/saturation voltage; (4)Excellent safe operating area.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2N5302G |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
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2N5302 |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
Negotiable |
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